ETCHING OF SILICON BY SF6 INDUCED BY ION-BOMBARDMENT

被引：33

作者：

OOSTRA, DJ ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

SANDERS, FHM ^{[1
]}

VANVEEN, GNA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 13卷 / 1-3期

关键词：

This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (Foundation for Fundamental Research on Matter) and was made possible by financial support from the Neder-iandse Organisatie voor Zuiver Wetenschappelijk On-derzoek (Netherlands Organization for the Advancement of Pure Research); and the Philips Research Laboratories in Eindhoven; The Netherlands;

D O I：

10.1016/0168-583X(86)90565-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

26

引用

收藏

页码：556 / 560

页数：5

相关论文

共 26 条

[11] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J].

GEIS, MW ;

LINCOLN, GA ;

EFREMOW, N ;

PIACENTINI, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1390-1393

[12] REACTIVE SPUTTERING OF SIMPLE CONDENSED GASES BY KEV IONS .2. MASS-SPECTRA [J].

HARING, RA ;

PEDRYS, R ;

OOSTRA, DJ ;

HARING, A ;

DEVRIES, AE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 5 (03) :476-482

[13] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J].

HARING, RA ;

HARING, A ;

SARIS, FW ;

DEVRIES, AE .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :174-176

[14] REACTIVE SPUTTERING OF SIMPLE CONDENSED GASES BY KEV IONS .3. KINETIC-ENERGY DISTRIBUTIONS [J].

HARING, RA ;

PEDRYS, R ;

OOSTRA, DJ ;

HARING, A ;

DEVRIES, AE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 5 (03) :483-488

[15]

HARING RA, 1984, THESIS LEIDEN

[16] ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J].

KOLFSCHOTEN, AW ;

HARING, RA ;

HARING, A ;

DEVRIES, AE .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3813-3818

[17]

MITZUTANI T, 1985, NUCL INSTRUM METH B, V7, P825

[18] SYNCHROTRON PHOTOEMISSION INVESTIGATION - FLUORINE ON SILICON SURFACES [J].

MORAR, JF ;

MCFEELY, FR ;

SHINN, ND ;

LANDGREN, G ;

HIMPSEL, FJ .

APPLIED PHYSICS LETTERS, 1984, 45 (02) :174-176

[19] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J].

OEHRLEIN, GS ;

TROMP, RM ;

LEE, YH ;

PETRILLO, EJ .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :420-422

[20] ION-ASSISTED ETCHING OF SILICON BY SF6 [J].

OOSTRA, DJ ;

HARING, A ;

DEVRIES, AE ;

SANDERS, FHM ;

MIYAKE, K .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1166-1168