HOT-ELECTRONS IN MOS-TRANSISTORS - LATERAL DISTRIBUTION OF THE TRAPPED OXIDE CHARGE

[1] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[2] HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 328 - 340

[3] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1520 - 1532

[4] GREENFIELD JA, 1980, G2017 STANF EL LABS

[5] Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[6] Ko P. K., 1981, International Electron Devices Meeting, P600

[7] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[8] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3203 - 3208

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[10] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550

[1] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[2] HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 328 - 340

[3] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1520 - 1532

[4] GREENFIELD JA, 1980, G2017 STANF EL LABS

[5] Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[6] Ko P. K., 1981, International Electron Devices Meeting, P600

[7] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[8] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3203 - 3208

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[10] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550