POROUS SILICON INVESTIGATED BY POSITRON-ANNIHILATION

被引：11

作者：

DELACRUZ, RM

PAREJA, R

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：463 / 468

页数：6

共 11 条

[1] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON
BEALE, MIJ
CHEW, NG
UREN, MJ
CULLIS, AG
BENJAMIN, JD
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 86 - 88
[2] A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS
DANNEFAER, S
KERR, D
HOGG, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 155 - 160
[3] A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON
DANNEFAER, S
FRUENSGAARD, N
KUPCA, S
HOGG, B
KERR, D
[J]. CANADIAN JOURNAL OF PHYSICS, 1983, 61 (03) : 451 - 459
[4] POSITRON-ANNIHILATION STUDY OF VOIDS IN A-SI AND A-SI-H
HE, YJ
HASEGAWA, M
LEE, R
BERKO, S
ADLER, D
JUNG, AL
[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5924 - 5927
[5] Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7
[6] POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS
HERINO, R
BOMCHIL, G
BARLA, K
BERTRAND, C
GINOUX, JL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 1994 - 2000
[7] FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS
IMAI, K
UNNO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) : 297 - 302
[8] THE CURRENT-VOLTAGE CHARACTERISTICS OF A PHOTOELECTROCHEMICAL CELL USING P-TYPE POROUS SI
KOSHIDA, N
NAGASU, M
SAKUSABE, T
KIUCHI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 346 - 349
[9] HIGH-TEMPERATURE TREATMENT OF POROUS SILICON
LABUNOV, VA
BONDARENKO, VP
BORISENKO, VE
DOROFEEV, AM
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01): : 193 - 198
[10] AMORPHOUS HYDROGENATED SILICON STUDIED BY POSITRON LIFETIME SPECTROSCOPY
SCHAEFER, HE
WURSCHUM, R
SCHWARZ, R
SLOBODIN, D
WAGNER, S
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (03): : 145 - 149

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