MICROSCOPIC STUDIES AT CADMIUM IMPURITIES IN COMPOUND SEMICONDUCTORS

被引：10

作者：

BAURICHTER, A

DEICHER, M

DEUBLER, S

FORKEL, D

MEIER, J

WOLF, H

WITTHUHN, W

机构：

[1] UNIV CONSTANCE,FAK PHYS,W-7750 CONSTANCE,GERMANY

[2] CERN,DIV PPE,CH-1211 GENEVA 23,SWITZERLAND

[3] UNIV SAARLAND,W-6600 SAARBRUCKEN,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90157-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecule-like defect complexes have been studied at Cd acceptors in the III-V semiconductors GaAs, GaP, InP, InAs, and InSb by PAC spectroscopy. After hydrogen plasma treatment, the formation of Cd-H complexes was observed in all these compounds. Additionally, the formation and stability of Cd-S and Cd-Se pairs in GaAs have been analyzed.

引用

页码：165 / 168

页数：4

共 11 条

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