SLOPE ANGLE INFLUENCE ON SILICON DOPING IN ALGAAS/GAAS MBE-GROWN ON STEPPED SURFACE OF (100) GAAS SUBSTRATE

被引：7

作者：

NOBUHARA, H

WADA, O

FUJII, T

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 01期

关键词：

ALUMINUM GALLIUM ARSENIDE - SLOPE ANGLE;

D O I：

10.1049/el:19870026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：35 / 36

页数：2

共 10 条

[1] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
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[2] VERY LOW THRESHOLD CURRENT GAAS-ALGAAS GRIN-SCH LASERS GROWN BY MBE FOR OEIC APPLICATIONS
FUJII, T
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[3] GROVE AS, PHYSICS TECHNOLOGY S, P196
[4] LATERAL P-N-JUNCTION FORMATION IN GAAS MOLECULAR-BEAM EPITAXY BY CRYSTAL PLANE DEPENDENT DOPING
MILLER, DL
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1309 - 1311
[5] NOBUHARA H, 1986, 18TH C SOL STAT DEV, P185
[6] SHAW DW, 1968, 2ND P INT GAAS S DAL, P50
[7] VERY LOW THRESHOLD CURRENT RIDGE-WAVEGUIDE ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS
WADA, O
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FUJII, T
[J]. ELECTRONICS LETTERS, 1985, 21 (22) : 1025 - 1026
[8] A NEW FABRICATION TECHNIQUE FOR OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS) - THE GRADED-STEP PROCESS - APPLIED TO THE FABRICATION OF ALGAAS/GAAS PIN/FET AND PIN/AMPLIFIER PHOTORECEIVERS
WADA, O
MIURA, S
MACHIDA, H
NAKAI, K
SAKURAI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1996 - 2002
[9] CRYSTAL ORIENTATION DEPENDENCE OF SILICON DOPING IN MOLECULAR-BEAM EPITAXIAL ALGAAS/GAAS HETEROSTRUCTURES
WANG, WI
MENDEZ, EE
KUAN, TS
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 826 - 828
[10] STRUCTURAL STUDIES OF (511) AND (711) GAAS SURFACE
YOUNG, K
KAHN, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1091 - 1094

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