SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY - GROWTH AND ELECTRICAL EVALUATION FOR DEVICES

[1] BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] BRONNER G, 1988, S VLSI TECH, P21

[3] Drowley C. I., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P243

[4] Drowley C. I., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P418

[5] FRIEDRICH J, IN PRESS J APPL PHYS

[6] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2924 - 2928

[7] ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100) [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4584 - 4588

[8] DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 32 - 35

[9] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1232 - 1235

[10] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306

[1] BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] BRONNER G, 1988, S VLSI TECH, P21

[3] Drowley C. I., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P243

[4] Drowley C. I., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P418

[5] FRIEDRICH J, IN PRESS J APPL PHYS

[6] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2924 - 2928

[7] ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100) [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4584 - 4588

[8] DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 32 - 35

[9] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1232 - 1235

[10] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306