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ELECTRON-SPIN-RESONANCE STUDY OF INTERFACE STATES INDUCED BY ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES
被引:32
作者
:
MIKAWA, RE
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV, ENGN SCI PROGRAM, UNIVERSITY PK, PA 16802 USA
PENN STATE UNIV, ENGN SCI PROGRAM, UNIVERSITY PK, PA 16802 USA
MIKAWA, RE
[
1
]
LENAHAN, PM
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV, ENGN SCI PROGRAM, UNIVERSITY PK, PA 16802 USA
PENN STATE UNIV, ENGN SCI PROGRAM, UNIVERSITY PK, PA 16802 USA
LENAHAN, PM
[
1
]
机构
:
[1]
PENN STATE UNIV, ENGN SCI PROGRAM, UNIVERSITY PK, PA 16802 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 59卷
/ 06期
关键词
:
D O I
:
10.1063/1.336390
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2054 / 2059
页数:6
相关论文
共 48 条
[41]
EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
SANDOR, JE
论文数:
0
引用数:
0
h-index:
0
SANDOR, JE
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(09)
: 181
-
&
[42]
SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION
TAKEDA, E
论文数:
0
引用数:
0
h-index:
0
TAKEDA, E
KUME, H
论文数:
0
引用数:
0
h-index:
0
KUME, H
TOYABE, T
论文数:
0
引用数:
0
h-index:
0
TOYABE, T
ASAI, S
论文数:
0
引用数:
0
h-index:
0
ASAI, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 611
-
618
[43]
TERMAN LM, 1962, SOLID STATE ELECTRON, V5, P295
[44]
HIGH-FIELD TRANSPORT IN SIO2 ON SILICON INDUCED BY CORONA CHARGING OF UNMETALLIZED SURFACE
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
WEINBERG, ZA
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
JOHNSON, WC
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
LAMPERT, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(01)
: 248
-
255
[45]
THE MAGNITUDE OF ELECTRONIC ISOTOPE EFFECTS
WESTON, RE
论文数:
0
引用数:
0
h-index:
0
WESTON, RE
[J].
TETRAHEDRON,
1959,
6
(01)
: 31
-
35
[46]
2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
WINOKUR, PS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
BOESCH, HE
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCGARRITY, JM
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCLEAN, FB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3492
-
3494
[47]
ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
YOUNG, DR
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
IRENE, EA
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DIMARIA, DJ
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DEKEERSMAECKER, RF
MASSOUD, HZ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MASSOUD, HZ
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(10)
: 6366
-
6372
[48]
ZAININGER KH, 1966, IEEE T NUCL SCI, VNS13, P237
←
1
2
3
4
5
→
共 48 条
[41]
EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
SANDOR, JE
论文数:
0
引用数:
0
h-index:
0
SANDOR, JE
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(09)
: 181
-
&
[42]
SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION
TAKEDA, E
论文数:
0
引用数:
0
h-index:
0
TAKEDA, E
KUME, H
论文数:
0
引用数:
0
h-index:
0
KUME, H
TOYABE, T
论文数:
0
引用数:
0
h-index:
0
TOYABE, T
ASAI, S
论文数:
0
引用数:
0
h-index:
0
ASAI, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 611
-
618
[43]
TERMAN LM, 1962, SOLID STATE ELECTRON, V5, P295
[44]
HIGH-FIELD TRANSPORT IN SIO2 ON SILICON INDUCED BY CORONA CHARGING OF UNMETALLIZED SURFACE
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
WEINBERG, ZA
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
JOHNSON, WC
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540
LAMPERT, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(01)
: 248
-
255
[45]
THE MAGNITUDE OF ELECTRONIC ISOTOPE EFFECTS
WESTON, RE
论文数:
0
引用数:
0
h-index:
0
WESTON, RE
[J].
TETRAHEDRON,
1959,
6
(01)
: 31
-
35
[46]
2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
WINOKUR, PS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
BOESCH, HE
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCGARRITY, JM
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCLEAN, FB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3492
-
3494
[47]
ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
YOUNG, DR
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
IRENE, EA
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DIMARIA, DJ
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DEKEERSMAECKER, RF
MASSOUD, HZ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MASSOUD, HZ
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(10)
: 6366
-
6372
[48]
ZAININGER KH, 1966, IEEE T NUCL SCI, VNS13, P237
←
1
2
3
4
5
→