INGAAS/INP HOT-ELECTRON TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

In this letter, we report on the de performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential beta (dI(c)/dI(B)) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 angstrom. Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with approximately 60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.