INGAAS/INP HOT-ELECTRON TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY

被引:10
作者
CHEN, WL
SUN, JP
HADDAD, GI
SHERWIN, ME
MUNNS, GO
EAST, JR
MAINS, RK
机构
[1] Center for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor
关键词
D O I
10.1063/1.108214
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we report on the de performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential beta (dI(c)/dI(B)) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 angstrom. Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with approximately 60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.
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页码:189 / 191
页数:3
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