HIGH RADIANCE LIGHT-EMITTING DIODES

被引：18

作者：

HORIKOSHI, Y ^{[1
]}

TAKANASHI, Y ^{[1
]}

IWANE, G ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 03期

关键词：

D O I：

10.1143/JJAP.15.485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：485 / 492

页数：8

共 13 条

[1] ELECTROMAGNETIC THEORY OF HETEROSTRUCTURE INJECTION LASERS
ADAMS, MJ
CROSS, M
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (09) : 865 - +
[2] SMALL-AREA HIGH-CURRENT-DENSITY GAAS ELECTROLUMINESCENT DIODES AND A METHOD OF OPERATION FOR IMPROVED DEGRADATION CHARACTERISTICS
BURRUS, CA
DAWSON, RW
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 97 - &
[3] EFFICIENT SMALL-AREA GAAS-GA1-XA1XAS HETEROSTRUCTURE ELECTROLUMINESCENT DIODES COUPLED TO OPTICAL FIBERS
BURRUS, CA
ULMER, EA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1263 - &
[4] ELECTROLUMINESCENCE IN AMPNOTERIC SILICON-DOPED GAAS DIODES .2. TRANSIENT RESPONSE
BYER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1602 - &
[5] COHEN LG, 1972, AT&T TECH J, V51, P573, DOI 10.1002/j.1538-7305.1972.tb01937.x
[6] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
DELOACH, BC
HAKKI, BW
HARTMAN, RL
DASARO, LA
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
[7] Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]
[8] HIGH-RADIANCE LIGHT-EMITTING DIODES
ETTENBERG, M
HUDSON, KC
LOCKWOOD, HF
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (10) : 987 - 991
[9] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES
KRESSEL, H
HAWRYLO, FZ
ALMELEH, N
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &
[10] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS
KRESSEL, H
LOCKWOOD, HF
BUTLER, JK
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4095 - 4097

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