SUBSTITUTIONAL DOPING AND PHOTOVOLTAIC APPLICATION OF RF-MAGNETRON SPUTTERED A-SI-H

被引：7

作者：

MULLER, W

RUBEL, H

SCHRODER, B

GEIGER, J

机构：

来源：

SOLAR ENERGY MATERIALS | 1986年 / 13卷 / 05期

关键词：

D O I：

10.1016/0165-1633(86)90086-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：385 / 398

页数：14

共 44 条

[1]

ALLISON J, 1983, SOLAR ENERGY RES D C, V3, P178

[2]

ANDERSON DA, 1982, PHILOS MAG B, V45, P1, DOI 10.1080/01418618208243899

[3] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712

[4] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS-SILICON FILMS [J].

BEYER, W ;

WAGNER, H .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :783-786

[5] DETERMINATION OF THE HYDROGEN DIFFUSION-COEFFICIENT IN HYDROGENATED AMORPHOUS-SILICON FROM HYDROGEN EFFUSION EXPERIMENTS [J].

BEYER, W ;

WAGNER, H .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8745-8750

[6]

BEYER W, 1984, SEMICONDUCTORS SEM C, V21, pCH8

[7]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[8] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[9] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].

COHEN, JD ;

HARBISON, JP ;

WECHT, KW .

PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112

[10] OPTICAL-PROPERTIES OF REACTIVELY SPUTTERED A-SIHX FILMS [J].

DENEUFVILLE, JP ;

MOUSTAKAS, TD ;

RUPPERT, AF ;

LANFORD, WA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :481-486

← 1 2 3 4 5 →