TEMPERATURE-DEPENDENCE OF AN INGAAS-2DEG HALL DEVICE WITH LARGE MAGNETIC SENSITIVITY

被引：5

作者：

SUGIYAMA, Y

机构：

[1] Electrochemical Laboratory, Tsukuba, 305, 1-1-4, Umezono

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 40卷 / 02期

关键词：

D O I：

10.1016/0924-4247(94)85019-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characteristics of an InGaAs-2DEG Hall device made of pseudomorphic InAlAs/InGaAs heterostructure semiconductors in the temperature range 10-320 K have been studied. This device can be operated with high sensitivity at low temperature. Its magnetic sensitivity is several times as large as that of InSb Hall devices and the temperature dependence is comparable to that of GaAs Hall devices. The temperature coefficients of the Greek-cross Hall device at room temperature are -0.084 and -0.54%/K, respectively, for current drive and voltage drive. A maximum magnetic sensitivity of 33.5 V/T was obtained at 11 K. Powerful sensing applications using the InGaAs-2DEG Hall device in the demanding conditions of automobiles and factory automation are expected.

引用

页码：135 / 140

页数：6

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