HIGH ELECTRON-MOBILITY PSEUDOMORPHIC IN0.52AL0.48AS/IN0.8GA0.2AS HETEROSTRUCTURE ON INP GROWN BY FLUX-STABILIZED MBE

被引：14

作者：

SUGIYAMA, Y ^{[1
]}

TAKEUCHI, Y ^{[1
]}

TACANO, M ^{[1
]}

机构：

[1] NIPPONDENSO CO LTD,KOMENOKI MINAMIYAMA,NISSHIN,AICHI 47001,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90795-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A very high electron mobility pseudomorphic Si-doped In0.48Al0.52As/ undoped In0.8Ga0.2As heterostructure is successfully grown on the InP substrate by the newly invented technology of stabilizing the transient vapor flux of group-III cells with SQRT control and inserting an InAs monolayer in the heterointerface between the channel layer and the spacer. The actual critical thickness of the pseudomorphic heterostructure as determined by the Hall measurement is found to follow the energy balance model, and the highest 2DEG mobilities over 1.6 and 16 m2/V.s with 1.6 x 10(12) cm-2 at 293 and 10 K, respectively, are obtained for the InP-based pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure.

引用

页码：509 / 514

页数：6

共 11 条

[1]

BALLINGALL JM, 1990, MATER RES SOC SYMP P, V160, P759

[2] ELIMINATION OF THE FLUX TRANSIENTS FROM MOLECULAR-BEAM EPITAXY SOURCE CELLS FOLLOWING SHUTTER OPERATION [J].

CHILTON, PA ;

TRUSCOTT, WS ;

WEN, YF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1099-1104

[3] SURFACE SEGREGATION OF 3RD-COLUMN ATOMS IN III-V TERNARY ARSENIDES [J].

HOUZAY, F ;

MOISON, JM ;

GUILLE, C ;

BARTHE, F ;

VANROMPAY, M .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :35-37

[4]

KANOMATA S, 1989, 36TH M JAP SOC APPL

[5]

LIU HY, 1990, MATER RES SOC SYMP P, V160, P771

[6] EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MASSIES, J ;

TURCO, F ;

SALETES, A ;

CONTOUR, JP .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :307-314

[7]

MATTHEWS JW, 1976, J VAC SCI TECHNOL B, V6, P1285

[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

[9] IMPROVEMENTS TO AND CHARACTERIZATION OF GAINAS/ALINAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCOTT, EG ;

DAVEY, ST ;

HALLIWELL, MAG ;

DAVIES, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :603-606

[10] 60-GHZ PSEUDOMORPHIC AL025GA075AS/IN028GA072AS LOW-NOISE HEMTS [J].

TAN, KL ;

DIA, RM ;

STREIT, DC ;

SHAW, LK ;

HAN, AC ;

SHOLLEY, MD ;

LIU, PH ;

TRINH, TQ ;

LIN, T ;

YEN, HC .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (01) :23-25

← 1 2 →