60-GHZ PSEUDOMORPHIC AL025GA075AS/IN028GA072AS LOW-NOISE HEMTS

被引：43

作者：

TAN, KL

DIA, RM

STREIT, DC

SHAW, LK

HAN, AC

SHOLLEY, MD

LIU, PH

TRINH, TQ

LIN, T

YEN, HC

机构：

[1] TRW Electronics and Technology Division, Redondo Beach, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 01期

关键词：

D O I：

10.1109/55.75686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully fabricated state-of-the-art V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMT's) with an indium mole fraction of 28% in the InGaAs channel. A device with a 0.15-mu-m T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz.

引用

收藏

页码：23 / 25

页数：3

相关论文

共 7 条

[1]

AUST A, 1989, P GAAS IC S, P95

[2] VERY LOW-NOISE AL0.3GA0.7AS/GA0.65IN0.35AS/GAAS SINGLE QUANTUM-WELL PSEUDOMORPHIC HEMTS [J].

CHAO, PC ;

HO, P ;

DUH, KHG ;

SMITH, PM ;

BALLINGALL, JM ;

JABRA, AA ;

LEWIS, N ;

HALL, EL .

ELECTRONICS LETTERS, 1990, 26 (01) :27-28

[3] DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].

CHAO, PC ;

SHUR, MS ;

TIBERIO, RC ;

DUH, KHG ;

SMITH, PM ;

BALLINGALL, JM ;

HO, P ;

JABRA, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :461-473

[4] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J].

MISHRA, UK ;

BROWN, AS ;

ROSENBAUM, SE ;

HOOPER, CE ;

PIERCE, MW ;

DELANEY, MJ ;

VAUGHN, S ;

WHITE, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :647-649

[5]

MOLL N, 1988, IEEE T ELECTRON DEV, V35, P878

[6] INFLUENCE OF QUANTUM-WELL WIDTH ON DEVICE PERFORMANCE OF AL0.30GA0.70AS IN0.25GA0.75AS (ON GAAS) MODFETS [J].

NGUYEN, LD ;

RADULESCU, DC ;

FOISY, MC ;

TASKER, PJ ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) :833-838

[7] ULTRALOW-NOISE W-BAND PSEUDOMORPHIC INGAAS HEMTS [J].

TAN, KL ;

DIA, RM ;

STREIT, DC ;

HAN, AC ;

TRINH, TQ ;

VELEBIR, JR ;

LIU, PH ;

LIN, TS ;

YEN, HC ;

SHOLLEY, M ;

SHAW, L .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (07) :303-305