ANISOTROPIC ETCHING OF SILICON IN HYDRAZINE

被引：18

作者：

GAJDA, MA

AHMED, H

SHAW, JEA

PUTNIS, A

机构：

[1] THORN EMI CRL,HAYES UB3 1HH,MIDDX,ENGLAND

[2] UNIV CAMBRIDGE,DEPT EARTH SCI,CAMBRIDGE CB2 3EQ,ENGLAND

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 40卷 / 03期

关键词：

D O I：

10.1016/0924-4247(94)87009-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of experiments has been carried out to study the etching properties of silicon in hydrazine, with particular emphasis on the applicability of the etchant in micromachining of microsensors. A new method of suppressing the etching of aluminium in hydrazine is presented 'and a simple theory to account for the observed effects is proposed. Practical aspects involved in the setting up of hydrazine etching equipment are also discussed.

引用

页码：227 / 236

页数：10

共 12 条

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