ANISOTROPIC ETCHING OF SILICON IN HYDRAZINE

[1] ANISOTROPIC ETCHING OF SILICON - A MODEL DIFFUSION-CONTROLLED REACTION [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (02): : 49 - 56

[2] UMOS TRANSISTORS ON (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 907 - 914

[3] Baran E. F., 1977, IBM Technical Disclosure Bulletin, V19

[4] BARTH PW, 1985, 3RD P INT C SOL STAT, P371

[5] INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 135 - 137

[6] Bassous E., 1977, IBM Technical Disclosure Bulletin, V19, P3623

[7] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[8] FABRICATION OF HIGH PRECISION NOZZLES BY ANISOTROPIC ETCHING OF (100) SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1321 - 1327

[9] BASSOUS E, 1976, SOLID STATE TECHNOL, V19, P55

[10] BASSOUS E, 1975, Patent No. 3921916

[1] ANISOTROPIC ETCHING OF SILICON - A MODEL DIFFUSION-CONTROLLED REACTION [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (02): : 49 - 56

[2] UMOS TRANSISTORS ON (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 907 - 914

[3] Baran E. F., 1977, IBM Technical Disclosure Bulletin, V19

[4] BARTH PW, 1985, 3RD P INT C SOL STAT, P371

[5] INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 135 - 137

[6] Bassous E., 1977, IBM Technical Disclosure Bulletin, V19, P3623

[7] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[8] FABRICATION OF HIGH PRECISION NOZZLES BY ANISOTROPIC ETCHING OF (100) SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1321 - 1327

[9] BASSOUS E, 1976, SOLID STATE TECHNOL, V19, P55

[10] BASSOUS E, 1975, Patent No. 3921916