ANISOTROPIC ETCHING OF SILICON IN HYDRAZINE

被引：43

作者：

MEHREGANY, M ^{[1
]}

SENTURIA, SD ^{[1
]}

机构：

[1] MIT, DEPT ELECT ENGN & COMP SCI, MICROSYST TECHNOL LABS, CAMBRIDGE, MA 02139 USA

来源：

SENSORS AND ACTUATORS | 1988年 / 13卷 / 04期

关键词：

D O I：

10.1016/0250-6874(88)80050-7

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：375 / 390

页数：16

相关论文

共 68 条

[61] PREFERENTIALLY ETCHED DIFFRACTION GRATINGS IN SILICON
TSANG, WT
WANG, S
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2163 - 2166
[62] OPTICAL BENDS AND RINGS FABRICATED BY PREFERENTIAL ETCHING
TSENG, CC
BOTEZ, D
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 699 - 701
[63] CORRELATION OF ANISOTROPIC ETCHING OF SINGLE-CRYSTAL SILICON SPHERES AND WAFERS
WEIRAUCH, DF
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1478 - 1483
[64] Wu X. P., 1985, 3RD P INT C SOL STAT, P291
[65] 1982, TRANSENE CO INC B, V207
[66] HYDRAZINE BADGE TYPE
[67] BORON PLANAR SOURCES
[68] [No title captured]

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