IMPROVED MOBILITY IN INXGA1-XASYP1-Y ALLOYS USING HIGH-TEMPERATURE LIQUID-PHASE EPITAXY

被引：18

作者：

BENCHIMOL, JL

QUILLEC, M

SLEMPKES, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90254-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：96 / 100

页数：5

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