SIDEWALL-TAPERED OXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

SMITH, GC

PURDES, AJ

机构：

[1] Texas Instruments Inc, Semiconductor, Process & Design Cent, Dallas,, TX, USA, Texas Instruments Inc, Semiconductor Process & Design Cent, Dallas, TX, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

PECVD - PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION - SIDEWALL-TAPERED OXIDE - SINGLE-WAFER REACTOR;

D O I：

10.1149/1.2113653

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2721 / 2725

页数：5

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