SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS BY (NH4)(2)S-X SURFACE-TREATMENT

被引：5

作者：

ALI, ST

KUMAR, A

BOSE, DN

机构：

[1] Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur

来源：

JOURNAL OF MATERIALS SCIENCE | 1995年 / 30卷 / 19期

关键词：

D O I：

10.1007/BF01154518

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(NH4)(2)S-x surface treatment was found to increase the barrier height (phi(Bn)) for Au/In0.53Ga0.47As Schottky junctions from 0.26 eV to 0.58 eV at 300 K as determined from Richardson plots. The ideality factor n thus decreased from 2.7 to 1.6 and the reverse saturation current density J(o) from 9.4 A cm(-2) to 3.4 x 10(-5) A cm(-2). The values of the effective Richardson constant were also evaluated. The chemical state of In0.53Ga0.47As surfaces before and after (NH4)(2)S-x modification, examined by X-ray photoelectron spectroscopy (XPS), indicated bond formation of S with In, Ga and As.

引用

收藏

页码：5031 / 5035

页数：5

相关论文

共 20 条

[1] IMPROVED AU/N-GAAS SCHOTTKY BARRIERS DUE TO RU SURFACE MODIFICATION [J].

ALI, ST ;

BOSE, DN .

MATERIALS LETTERS, 1991, 12 (05) :388-393

[2]

ALI ST, 1992, 18TH IEEE P ANN CONV

[3] CHEMICAL, STRUCTURAL, AND ELECTRONIC-PROPERTIES OF SULFUR-PASSIVATED INP(001) (2X1) SURFACES TREATED WITH (NH4)2SX [J].

GALLET, D ;

HOLLINGER, G .

APPLIED PHYSICS LETTERS, 1993, 62 (09) :982-984

[4] HIGH-PERFORMANCE AL0.15GA0.85AS/IN0.53GA0.47AS MSM PHOTODETECTORS GROWN BY OMCVD [J].

HONG, WP ;

CHANG, GK ;

BHAT, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :659-662

[5] SCHOTTKY-BARRIER HEIGHT ENHANCEMENT OF N-IN0.53GA0.47AS BY A NOVEL CHEMICAL PASSIVATION TECHNIQUE [J].

HWANG, KC ;

LI, SS ;

PARK, C ;

ANDERSON, TJ .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) :6571-6573

[6] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[7]

KHUL D, 1990, ELECTRON LETT, V26, P2107

[8] GA0.47IN0.53AS METAL-SEMICONDUCTOR-METAL PHOTODIODES USING A LATTICE MISMATCHED AL0.4GA0.6AS SCHOTTKY ASSIST LAYER [J].

KIKUCHI, T ;

OHNO, H ;

HASEGAWA, H .

ELECTRONICS LETTERS, 1988, 24 (19) :1208-1210

[9] A HIGH-SPEED INP-BASED INXGA1-XAS SCHOTTKY-BARRIER INFRARED PHOTODIODE FOR FIBER-OPTIC COMMUNICATIONS [J].

KIM, JH ;

LI, SS ;

FIGUEROA, L ;

CARRUTHERS, TF ;

WAGNER, RS .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6536-6540

[10] SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS [J].

KORDOS, P ;

MARSO, M ;

MEYER, R ;

LUTH, H .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) :2347-2355