ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS

被引：497

作者：

CARDONA, M ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6182

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6182 / 6194

页数：13

共 92 条

[81] THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM
VAN DE WALLE, CG
MARTIN, RM
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5621 - 5634
[82] VANDEWALLE CG, UNPUB
[83] VANDEWALLE CG, IN PRESS PHYS REV B
[84] VANDEWALLE CG, 1986, THESIS STANFORD U PA
[85] ABSOLUTE HYDROSTATIC DEFORMATION POTENTIALS OF TETRAHEDRAL SEMICONDUCTORS
VERGES, JA
GLOTZEL, D
CARDONA, M
ANDERSEN, OK
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 113 (02): : 519 - 534
[86] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF GERMANIUM
VINA, L
LOGOTHETIDIS, S
CARDONA, M
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1979 - 1991
[87] LOW-TEMPERATURE PHONON-LIMITED ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES
VINTER, B
[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5904 - 5905
[88] VALENCE-BAND DISCONTINUITIES FOR ABRUPT(110), ABRUPT(100), AND ABRUPT(111) ORIENTED GE-GAAS HETEROJUNCTIONS
WALDROP, JR
KRAUT, EA
KOWALCZYK, SP
GRANT, RW
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 513 - 518
[89] ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES - REPLY
WALUKIEWICZ, W
RUDA, HE
LAGOWSKI, J
GATOS, HC
[J]. PHYSICAL REVIEW B, 1985, 32 (04): : 2645 - 2646
[90] VALENCE-BAND DEFORMATION POTENTIALS FOR III-V COMPOUNDS
WILEY, JD
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (22) : 1865 - &