ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS

[61] POLLAK FH, 1971, PHYS REV B, V2, P352

[62] PRICE PJ, 1985, PHYS REV B, V32, P2643, DOI 10.1103/PhysRevB.32.2643

[63] TIGHT-BINDING CALCULATION OF THE BAND OFFSET AT THE GE-GAAS (110) INTERFACE USING A LOCAL CHARGE-NEUTRALITY CONDITION [J]. PHYSICAL REVIEW B, 1986, 33 (10) : 7386 - 7388

[64] PHONON DRAG AND PHON INTERACTIONS IN N-INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A995 - &

[65] ELECTRON TRANSPORT IN INSB, INAS AND INP [J]. PHYSICAL REVIEW B, 1971, 3 (10): : 3287 - &

[66] RODE DL, 1975, SEMICONDUCT SEMIMET, V10, P84

[67] RODRIGUEZ S, 1986, PHYS REV B, V33, P772

[68] OPTICAL-ABSORPTION OF IN1-XGAXAS-GASB1-YASY SUPER-LATTICES [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (10) : 935 - 937

[69] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 211 - 213

[70] SRINIVASAN G, 1969, PHYS REV, V178, P1248

[61] POLLAK FH, 1971, PHYS REV B, V2, P352

[62] PRICE PJ, 1985, PHYS REV B, V32, P2643, DOI 10.1103/PhysRevB.32.2643

[63] TIGHT-BINDING CALCULATION OF THE BAND OFFSET AT THE GE-GAAS (110) INTERFACE USING A LOCAL CHARGE-NEUTRALITY CONDITION [J]. PHYSICAL REVIEW B, 1986, 33 (10) : 7386 - 7388

[64] PHONON DRAG AND PHON INTERACTIONS IN N-INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A995 - &

[65] ELECTRON TRANSPORT IN INSB, INAS AND INP [J]. PHYSICAL REVIEW B, 1971, 3 (10): : 3287 - &

[66] RODE DL, 1975, SEMICONDUCT SEMIMET, V10, P84

[67] RODRIGUEZ S, 1986, PHYS REV B, V33, P772

[68] OPTICAL-ABSORPTION OF IN1-XGAXAS-GASB1-YASY SUPER-LATTICES [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (10) : 935 - 937

[69] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 211 - 213

[70] SRINIVASAN G, 1969, PHYS REV, V178, P1248