LOW-TEMPERATURE PHONON-LIMITED ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES

被引：27

作者：

VINTER, B

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5904

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5904 / 5905

页数：2

共 14 条

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[6]

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