ANALYSIS OF CHARACTERISTICS OF SILICON METAL-INSULATOR SEMICONDUCTOR TUNNEL-DIODES WITH DC-PLASMA-GROWN OXIDE

被引：4

作者：

BECK, RB

RUZYLLO, J

机构：

[1] Technical Univ of Warsaw, Warsaw, Pol, Technical Univ of Warsaw, Warsaw, Pol

来源：

THIN SOLID FILMS | 1986年 / 136卷 / 02期

关键词：

D O I：

10.1016/0040-6090(86)90278-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

14

引用

收藏

页码：173 / 180

页数：8

相关论文

共 14 条

[1] OXYGEN-PRESSURE AS A PARAMETER IN THE DC PLASMA ANODIZATION OF SILICON
BECK, RB
PATYRA, M
RUZYLLO, J
JAKUBOWSKI, A
[J]. THIN SOLID FILMS, 1980, 67 (02) : 261 - 264
[2] BECK RB, 1981, 2ND P INT C INF ERL, P73
[3] STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1602 - +
[4] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[5] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS
CLARKE, RA
SHEWCHUN, J
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &
[6] COBBOLD RSC, 1970, THEORY APPLICATIONS, P219
[7] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON
DRESSENDORFER, PV
BARKER, RC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 933 - 935
[8] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY
GREEN, MA
KING, FD
SHEWCHUN, J
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 551 - 561
[9] Jakubowski A., 1975, Archiwum Elektrotechniki, V24, P209
[10] Nicollian E.H., 1982, MOS METAL OXIDE SEMI, P222