CATALYTIC EFFECT OF SIO ON THERMOMIGRATION OF IMPURITIES IN SIO2

[1] AHN ST, 1988, ELECTROCHEMICAL SOC, V882

[2] BALK P, 1986, P EUROPEAN MRS C, V12, P263

[3] HIGH-TEMPERATURE STABILITY OF SI/SIO2 INTERFACES AND THE INFLUENCE OF SIO FLUX ON THERMOMIGRATION OF IMPURITIES IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2492 - 2494

[4] PRECIPITATION OF GROUP-V ELEMENTS AND GE IN SIO2 AND THEIR DRIFT IN A TEMPERATURE-GRADIENT [J]. APPLIED PHYSICS LETTERS, 1988, 53 (13) : 1178 - 1180

[5] CELLER GK, 1987, SOLID STATE TECHNOL, V30, P69

[6] CELLER GK, 1988, MATER RES SOC S P, V105, P47

[7] CRANK J, 1986, MATH DIFFUSION, P44

[8] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[9] DEFECT FORMATION IN SIO2/SI(100) BY METAL DIFFUSION AND REACTION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (07) : 589 - 591

[10] RUBLOFF GW, 1988, MRS S P, V105, P11

[1] AHN ST, 1988, ELECTROCHEMICAL SOC, V882

[2] BALK P, 1986, P EUROPEAN MRS C, V12, P263

[3] HIGH-TEMPERATURE STABILITY OF SI/SIO2 INTERFACES AND THE INFLUENCE OF SIO FLUX ON THERMOMIGRATION OF IMPURITIES IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2492 - 2494

[4] PRECIPITATION OF GROUP-V ELEMENTS AND GE IN SIO2 AND THEIR DRIFT IN A TEMPERATURE-GRADIENT [J]. APPLIED PHYSICS LETTERS, 1988, 53 (13) : 1178 - 1180

[5] CELLER GK, 1987, SOLID STATE TECHNOL, V30, P69

[6] CELLER GK, 1988, MATER RES SOC S P, V105, P47

[7] CRANK J, 1986, MATH DIFFUSION, P44

[8] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[9] DEFECT FORMATION IN SIO2/SI(100) BY METAL DIFFUSION AND REACTION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (07) : 589 - 591

[10] RUBLOFF GW, 1988, MRS S P, V105, P11