DEFECT FORMATION IN SIO2/SI(100) BY METAL DIFFUSION AND REACTION

被引：51

作者：

LIEHR, M

DALLAPORTA, H

LEWIS, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.100630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：589 / 591

页数：3

共 24 条

[1] SURFACE-REACTIONS ON MOS STRUCTURES [J].

ALESSANDRINI, EI ;

CAMPBELL, DR ;

TU, KM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4888-4893

[2] MECHANISM OF ALKALI-PROMOTED OXIDATION OF SILICON [J].

ASENSIO, MC ;

MICHEL, EG ;

OELLIG, EM ;

MIRANDA, R .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1714-1716

[3] AU AND AL INTERFACE REACTIONS WITH SIO2 [J].

BAUER, RS ;

BACHRACH, RZ ;

BRILLSON, LJ .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1006-1008

[4]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[5]

DALLAPORTA H, 1986, THESIS FS LUMINY MAR

[6] A STUDY OF THE OXIDATION OF SELECTED METAL SILICIDES [J].

FRAMPTON, RD ;

IRENE, EA ;

DHEURLE, FM .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2972-2980

[7] EFFECTS OF A THIN SIO2 LAYER ON THE FORMATION OF METAL-SILICON CONTACTS [J].

GOODNICK, SM ;

FATHIPOUR, M ;

ELLSWORTH, DL ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :949-954

[8] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING [J].

HOFMANN, K ;

RUBLOFF, GW ;

MCCORKLE, RA .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1525-1527

[9] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES [J].

HONDA, K ;

OHSAWA, A ;

TOYOKURA, N .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :270-271

[10] THERMAL-OXIDATION OF SILICON - NEW EXPERIMENTAL RESULTS AND MODELS [J].

IRENE, EA ;

GHEZ, R .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :1-16

← 1 2 3 →