THERMAL-OXIDATION OF SILICON - NEW EXPERIMENTAL RESULTS AND MODELS

被引：35

作者：

IRENE, EA ^{[1
]}

GHEZ, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90067-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1 / 16

页数：16

共 44 条

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[7] THERMAL-OXIDATION OF SILICIDES ON SILICON [J].

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[8] VISCOUS-FLOW OF THERMAL SIO2 [J].

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[9] STRESS IN THERMAL SIO2 DURING GROWTH [J].

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[10]

Evans U.R., 1960, EDWARD ARNOLD, DOI DOI 10.1002/MACO.19780290130

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