MBE GROWTH AND CHARACTERIZATION OF DELTA-DOPING IN GAAS AND GAAS/SI

被引：6

作者：

BASMAJI, P ^{[1
]}

CESCHIN, AM ^{[1
]}

LI, MS ^{[1
]}

HIPOLITO, O ^{[1
]}

BERNUSSI, AA ^{[1
]}

IIKAWA, F ^{[1
]}

MOTISUKE, P ^{[1
]}

机构：

[1] UNIV CAMPINAS,INST FIS GLEB WATAGHIN,BR-13081 CAMPINAS,SP,BRAZIL

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1016/0039-6028(90)90327-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the δ-doped GaAs with different cap layer thickness, donor concentrations and intensities of pumping light grown by molecular beam epitaxy, using photoreflectance spectroscopy. The spectra show transitions that we assigned to confined electronic states in the potential of the δ-doping. These electronic state levels depend strongly on the cap layer thickness. © 1990.

引用

页码：356 / 358

页数：3

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