CHARACTERIZATION OF YSZ FILMS BY MEANS OF C-V MEASUREMENTS AND TEM OBSERVATIONS

被引：5

作者：

BAGNOLI, PE ^{[1
]}

CIOFI, C ^{[1
]}

DILIGENTI, A ^{[1
]}

INNAMORATO, A ^{[1
]}

NANNINI, A ^{[1
]}

机构：

[1] UNIV PISA,DIPARTIMENTO INGN INFORMAZ ELETTR INFORMAT TELECO,I-56126 PISA,ITALY

来源：

THIN SOLID FILMS | 1995年 / 264卷 / 01期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; OXIDES; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1016/0040-6090(95)06587-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors with an insulating layer of yttria-stabilized zirconia always show drift and hysteresis as a consequence of the measurement procedure. A new measurement method allows one to lock the C-V hysteresis loop around a voltage value independent of the time and of the voltage measurement range. This tracking method is based on an initial measurement of the shift of the C-V plots for both p- and n-type substrates. The method has been used to characterize the electrical properties of MIS capacitors with stabilized zirconia as a dielectric layer. Transmission electron microscopy observations of the structure of zirconia films and YSZ/Si interfaces are also presented.

引用

页码：109 / 114

页数：6

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