ELECTRICAL CHARACTERISTICS OF ZRO2-BASED METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON P-SI

被引：32

作者：

KALKUR, TS ^{[1
]}

LU, YC ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT & COMP ENGN,PISCATAWAY,NJ 08855

来源：

THIN SOLID FILMS | 1992年 / 207卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90122-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The metal-insulator-semiconductor characteristics of annealed ZrO2 films and oxidized zirconium films have been compared. The ZrO2 and zirconium films have been deposited by electron beam evaporation. Scanning electron microscopy analysis reveals a smooth morphology for deposited as well as annealed or oxidized films. The X-ray diffraction analysis shows that the as-deposited films are amorphous and become crystalline as a result of annealing. The static dielectric constant was found to be higher for annealed zirconium oxide films as compared with oxidized zirconium films. The dielectric constant was found to be dependent on annealing temperature.

引用

页码：193 / 196

页数：4

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