PHOTOENHANCED MOCVD OF PBZRXTI1-XO3 THIN-FILMS

被引：6

作者：

SHIMIZU, M

SUGIYAMA, M

KATAYAMA, T

SHIOSAKI, T

机构：

[1] Department of Electronics, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto, 606, Yoshida Homnachi

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90425-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth of PbZrxTi1-xO3 (PZT) thin films was performed by photoenhanced metalorganic chemical vapor deposition (MOCVD), using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4, NO2 and O3. When NO2 was used as an oxidizing gas, the observed photoirradiation effects were an increase in the growth rate, an increase in the Zr content in the films, a change in the ferroelectric properties and a decrease in leakage current densities. When O3 was used, an increase in the growth rate was also observed. When films were grown using O3 and UV + O3, the films showed better leakage current characteristics than the films grown using O2.

引用

页码：293 / 298

页数：6

共 16 条

[1]

Hayashi S, 1992, MATER RES SOC S P, V243, P155

[2] EFFECT OF OZONE ANNEALING ON THE DIELECTRIC-PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].