ION-IMPLANTATION DOPING AND ISOLATION OF IN0.5GA0.5P

The activation of Si and Be ions implanted into In0.5Ga0.5P grown by gas-source molecular beam epitaxy on GaAs substrates was investigated as a function of ion dose (5 X 10(12)-10(15) cm-2) and rapid thermal annealing conditions (500-950-degrees-C; 10 s). Activation efficiencies close to 100% are obtained for Be doses up to approximately 10(14) cm-2 and annealing temperatures of 700-850-degrees-C. By contrast, implanted Si displays a saturation in active sheet electron densities at approximately 3 X 10(13) cm-2 and requires annealing at 900-degrees-C for optimum activation efficiency. High sheet resistance (greater-than-or-equal-to 10(8) OMEGA/Square) regions are created by O+ implantation into n+ InGaP(Si), with hopping conduction dominating carrier transport in the bombarded material. For postimplant annealing temperatures above 750-degrees-C, the conductivity is restored to its initial value. No evidence is found for the creation of electrically active oxygen-related deep levels in In0.5Ga0.5P.