COMPOSITIONAL ANALYSIS OF SEMICONDUCTOR HETEROJUNCTIONS - STRUCTURE OF SIC (THIN BUFFER LAYER)/SI(100) SYSTEM

被引：10

作者：

IWAMI, M

KUSAKA, M

HIRAI, M

NAKAMURA, H

KOSHIKAWA, T

SHIBAHARA, K

MATSUNAMI, H

机构：

[1] OSAKA ELECTROCOMMUN UNIV,NEYAGAWA,OSAKA 572,JAPAN

[2] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(88)90643-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：615 / 618

页数：4

共 10 条

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[7]

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[9] ANGLE RESOLVED DETECTION OF CHARGED-PARTICLES WITH A NOVEL TYPE TOROIDAL ELECTROSTATIC ANALYZER [J].

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[10] ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111) [J].

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SARIS, FW .

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