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CMOS LOGIC-CIRCUIT OPTIMUM DESIGN FOR RADIATION TOLERANCE
被引:8
作者
:
HATANO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,DIV INTEGRATED CIRCUITS,SAIWAI KU,KAWASAKI 210,JAPAN
TOSHIBA CORP,DIV INTEGRATED CIRCUITS,SAIWAI KU,KAWASAKI 210,JAPAN
HATANO, H
[
1
]
SHIBUYA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,DIV INTEGRATED CIRCUITS,SAIWAI KU,KAWASAKI 210,JAPAN
TOSHIBA CORP,DIV INTEGRATED CIRCUITS,SAIWAI KU,KAWASAKI 210,JAPAN
SHIBUYA, M
[
1
]
机构
:
[1]
TOSHIBA CORP,DIV INTEGRATED CIRCUITS,SAIWAI KU,KAWASAKI 210,JAPAN
来源
:
ELECTRONICS LETTERS
|
1983年
/ 19卷
/ 23期
关键词
:
D O I
:
10.1049/el:19830664
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:977 / 979
页数:3
相关论文
共 5 条
[1]
SOS DEVICE RADIATION EFFECTS AND HARDENING
[J].
BUCHANAN, BL
论文数:
0
引用数:
0
h-index:
0
BUCHANAN, BL
;
NEAMEN, DA
论文数:
0
引用数:
0
h-index:
0
NEAMEN, DA
;
SHEDD, WM
论文数:
0
引用数:
0
h-index:
0
SHEDD, WM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(08)
:959
-970
[2]
RADIATION FAILURE MODES IN CMOS INTEGRATED-CIRCUITS
[J].
BURGHARD, RA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
BURGHARD, RA
;
GWYN, CW
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GWYN, CW
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
:300
-306
[3]
SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES
[J].
FREEMAN, R
论文数:
0
引用数:
0
h-index:
0
FREEMAN, R
;
HOLMESSIEDLE, A
论文数:
0
引用数:
0
h-index:
0
HOLMESSIEDLE, A
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
:1216
-1225
[4]
HATANO H, 1981, FLOATING SUBSTRATE E, P359
[5]
PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME
[J].
TIHANYI, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,RES LABS,MUNICH,FED REP GER
SIEMENS AG,RES LABS,MUNICH,FED REP GER
TIHANYI, J
;
SCHLOTTERER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,RES LABS,MUNICH,FED REP GER
SIEMENS AG,RES LABS,MUNICH,FED REP GER
SCHLOTTERER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
:1017
-1023
←
1
→
共 5 条
[1]
SOS DEVICE RADIATION EFFECTS AND HARDENING
[J].
BUCHANAN, BL
论文数:
0
引用数:
0
h-index:
0
BUCHANAN, BL
;
NEAMEN, DA
论文数:
0
引用数:
0
h-index:
0
NEAMEN, DA
;
SHEDD, WM
论文数:
0
引用数:
0
h-index:
0
SHEDD, WM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(08)
:959
-970
[2]
RADIATION FAILURE MODES IN CMOS INTEGRATED-CIRCUITS
[J].
BURGHARD, RA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
BURGHARD, RA
;
GWYN, CW
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GWYN, CW
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
:300
-306
[3]
SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES
[J].
FREEMAN, R
论文数:
0
引用数:
0
h-index:
0
FREEMAN, R
;
HOLMESSIEDLE, A
论文数:
0
引用数:
0
h-index:
0
HOLMESSIEDLE, A
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
:1216
-1225
[4]
HATANO H, 1981, FLOATING SUBSTRATE E, P359
[5]
PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME
[J].
TIHANYI, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,RES LABS,MUNICH,FED REP GER
SIEMENS AG,RES LABS,MUNICH,FED REP GER
TIHANYI, J
;
SCHLOTTERER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,RES LABS,MUNICH,FED REP GER
SIEMENS AG,RES LABS,MUNICH,FED REP GER
SCHLOTTERER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
:1017
-1023
←
1
→