SOS DEVICE RADIATION EFFECTS AND HARDENING

被引：17

作者：

BUCHANAN, BL

NEAMEN, DA

SHEDD, WM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：959 / 970

页数：12

共 15 条

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[4] RADIATION-INDUCED LEAKAGE CURRENTS IN N-CHANNEL SILICON-ON-SAPPHIRE MOSTS [J].

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MCGREIVY, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1277-1284

[5] RADIATION-INDUCED LEAKAGE CURRENT IN N-CHANNEL SOS TRANSISTORS [J].

KJAR, RA ;

PEEL, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :208-210

[6] SILICON-SAPPHIRE INTERFACE CHARGE TRAPPING - EFFECTS OF SAPPHIRE TYPE AND EPI GROWTH-CONDITIONS [J].

NEAMEN, D ;

BUCHANAN, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1590-1593

[7] IONIZING-RADIATION EFFECTS IN SOS STRUCTURES [J].

NEAMEN, D ;

BUCHANAN, B ;

SHEDD, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2197-2202

[8] THIN-FILM SILICON ON SILICON-NITRIDE FOR RADIATION HARDENED DIELECTRICALLY ISOLATED MISFETS [J].

NEAMEN, D ;

SHEDD, W ;

BUCHANAN, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2203-2207

[9] RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE [J].

NEAMEN, D ;

SHEDD, W ;

BUCHANAN, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :211-216

[10]

NEAMEN D, 1973, DEC WORKSH RAD EFF M

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