SILICON-SAPPHIRE INTERFACE CHARGE TRAPPING - EFFECTS OF SAPPHIRE TYPE AND EPI GROWTH-CONDITIONS

被引：5

作者：

NEAMEN, D ^{[1
]}

BUCHANAN, B ^{[1
]}

机构：

[1] ROME AIR DEV CTR,HANSCOM AFB,MA 01731

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1590 / 1593

页数：4

共 8 条

[1] INHOMOGENEOUS CHANNEL RESISTIVITY FIELD EFFECT DEVICES [J].

DEMASSA, TA ;

GODDARD, DG .

SOLID-STATE ELECTRONICS, 1971, 14 (11) :1107-&

[2] INHOMOGENEOUS CHANNEL FET - ICFET [J].

DEMASSA, TA ;

CATALANO, GT .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :847-851

[3] RADIATION-INDUCED LEAKAGE CURRENT IN N-CHANNEL SOS TRANSISTORS [J].

KJAR, RA ;

PEEL, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :208-210

[4] IONIZING-RADIATION EFFECTS IN SOS STRUCTURES [J].

NEAMEN, D ;

BUCHANAN, B ;

SHEDD, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2197-2202

[5] RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE [J].

NEAMEN, D ;

SHEDD, W ;

BUCHANAN, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :211-216

[6] PERMANENT IONIZING-RADIATION EFFECTS IN DIELECTRICALLY BOUNDED FIELD-EFFECT TRANSISTORS [J].

NEAMEN, D ;

SHEDD, W ;

BUCHANA, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :158-165

[7] INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS [J].

PEEL, JL ;

PANCHOLY, RK ;

KUHLMANN, GJ ;

OKI, TJ ;

WILLIAMS, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2185-2189

[8] RADIATION HARDENING OF CMOS-SOS INTEGRATED-CIRCUITS [J].

SCHLESIER, KM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :152-158

← 1 →