ETCH RATES AND SURFACE-CHEMISTRY OF GAAS AND ALGAAS REACTIVELY ION ETCHED IN C2H6/H-2

被引：17

作者：

PEARTON, SJ ^{[1
]}

HOBSON, WS ^{[1
]}

JONES, KS ^{[1
]}

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：5009 / 5017

页数：9

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