DIELECTRIC AND TRANSPORT-PROPERTIES OF THIN POLYCRYSTALLINE CDTE-FILMS

被引:19
作者
DHARMADHIKARI, VS
机构
关键词
D O I
10.1080/00207218308938775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:787 / 800
页数:14
相关论文
共 43 条
[1]   POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS [J].
AUSTIN, IG ;
MOTT, NF .
ADVANCES IN PHYSICS, 1969, 18 (71) :41-+
[2]   OBSERVATION OF ELECTRON TRAPS IN ELECTROCHEMICALLY DEPOSITED CDTE-FILMS [J].
BASOL, BM ;
STAFSUDD, OM .
SOLID-STATE ELECTRONICS, 1981, 24 (02) :121-125
[3]   DETERMINATION OF TRAP PARAMETERS IN ELECTRODEPOSITED CDTE BY SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS [J].
BASOL, BM ;
STAFSUDD, OM .
THIN SOLID FILMS, 1981, 78 (03) :217-222
[4]   CHARACTERIZATION OF TRANSPORT PROPERTIES OF HALOGEN-DOPED CDTE USED FOR GAMMA-RAY DETECTORS [J].
BELL, RO ;
WALD, FV ;
CANALI, C ;
NAVA, F ;
OTTAVIAN.G .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) :331-341
[5]   STRUCTURE AND ELECTRICAL CONDUCTIVITY OF AMORPHOUS ZNTE AND CDTE [J].
BROWN, HM ;
BRODIE, DE .
CANADIAN JOURNAL OF PHYSICS, 1972, 50 (20) :2512-+
[6]   TRANSIENT AND STEADY-STATE SPACE-CHARGE-LIMITED CURRENT IN CDTE [J].
CANALI, C ;
NICOLET, MA ;
MAYER, JW .
SOLID-STATE ELECTRONICS, 1975, 18 (10) :871-&
[7]   ION-BEAM DEPOSITION OF THIN-FILMS OF FERROELECTRIC LEAD ZIRCONATE TITANATE (PZT) [J].
CASTELLANO, RN ;
FEINSTEIN, LG .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4406-4411
[8]   AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :184-&
[9]  
CHOPRA KL, 1965, J APPL PHYS, V36, P656
[10]   POLARON ZEEMAN EFFECT IN CDTE [J].
COHN, DR ;
LARSEN, DM ;
LAX, B .
PHYSICAL REVIEW B, 1972, 6 (04) :1367-&