DIELECTRIC AND TRANSPORT-PROPERTIES OF THIN POLYCRYSTALLINE CDTE-FILMS

被引：19

作者：

DHARMADHIKARI, VS

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1080/00207218308938775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：787 / 800

页数：14

共 43 条

[11] TRANSIT-TIME OSCILLATIONS IN BARITT DIODES [J].

COLEMAN, DJ .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1812-&

[12]

DENOBEL D, 1959, PHILIPS RES REP, V14, P430

[13] CHARACTERIZATION OF THIN-FILMS OF BISMUTH OXIDE BY X-RAY PHOTO-ELECTRON SPECTROSCOPY [J].

DHARMADHIKARI, VS ;

SAINKAR, SR ;

BADRINARAYAN, S ;

GOSWAMI, A .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1982, 25 (2-3) :181-189

[14] DIELECTRIC-PROPERTIES OF ELECTRON-BEAM-EVAPORATED ND2O3 THIN-FILMS [J].

DHARMADHIKARI, VS ;

GOSWAMI, A .

THIN SOLID FILMS, 1982, 87 (02) :119-126

[15]

DHARMADHIKARI VS, 1982, EE27382 U NEW MEX TE

[16]

DHARMADHIKARI VS, 1980, THESIS POONA U INDIA

[17]

DHERE NG, 1971, J VAC SCI TECHNOL, V9, P523

[18] ELECTRICAL PROPERTIES OF SEMIINSULATING CDTE [J].

DIDKOVSKII, AP ;

KHIVRICH, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02) :621-629

[19] TUNNELING THROUGH THIN INSULATING LAYERS [J].

FISHER, JC ;

GIAEVER, I .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) :172-&

[20] AC BEHAVIOR OF VACUUM-DEPOSITED PRASEODYMIUM OXIDE-FILMS [J].

GOSWAMI, A ;

GOSWAMI, AP .

THIN SOLID FILMS, 1974, 20 (01) :S3-S6

← 1 2 3 4 5 →