THE FORMATION OF SIO2-FILMS ON SILICON BY HIGH-DOSE OXYGEN ION-IMPLANTATION

被引：16

作者：

KREISSIG, U ^{[1
]}

HENSEL, E ^{[1
]}

SKORUPA, W ^{[1
]}

JOHANSEN, H ^{[1
]}

机构：

[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP

来源：

THIN SOLID FILMS | 1982年 / 98卷 / 03期

关键词：

D O I：

10.1016/0040-6090(82)90405-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：229 / 232

页数：4

共 8 条

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[6]

KREISSIG U, 1980, 11 ARB TAG PHYS HALB, P219

[7] ERROR ANALYSIS OF SURFACE STATE DENSITY DETERMINATION USING MOS CAPACITANCE METHOD [J].

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[8] APPLICATION OF NEMATIC LIQUID-CRYSTALS FOR INVESTIGATION OF P-N-JUNCTIONS AND INSULATING LAYERS [J].

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