PROPERTIES OF SIO2-FILMS FORMED BY OXYGEN IMPLANTATION INTO SILICON

被引：11

作者：

KIROV, KI ^{[1
]}

ATANASOVA, ED ^{[1
]}

ALEXANDROVA, SP ^{[1
]}

AMOV, BG ^{[1
]}

DJAKOV, AE ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI, INST NUCL RES & NUCL ENERGY, BU-1113 SOFIA, BULGARIA

来源：

THIN SOLID FILMS | 1978年 / 48卷 / 02期

关键词：

D O I：

10.1016/0040-6090(78)90240-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：187 / 192

页数：6

共 14 条

[1]

BLAMIRES NG, 1967, P INT C APPLICATION, P669

[2]

DEARNALEY G, 1973, ION IMPLANTATION, P689

[3] FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J].

DYLEWSKI, J ;

JOSHI, MC .

THIN SOLID FILMS, 1976, 35 (03) :327-336

[4] THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J].

DYLEWSKI, J ;

JOSHI, MC .

THIN SOLID FILMS, 1976, 37 (02) :241-248

[5] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J].

FAHRNER, W ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1972, 21 (07) :329-+

[6] CONTRIBUTIONS OF OXYGEN, SILICON, AND HYDROGEN TO INTERFACE STATES OF AN SI-SIO2 INTERFACE [J].

FAHRNER, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :784-787

[7] ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS [J].

FRITZSCHE, CR ;

ROTHEMUND, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1243-+

[8]

GUSEV VM, 1971, RADIOTEKH ELEKTRON, V16, P1462

[9]

KIROV K, 1976, DOKL BOLG AKAD NAUK, V29, P1749

[10]

KIROV KI, 1976, 7TH NATL C PHYS VID

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