EFFECT OF ADSORBED GASES AND TEMPERATURE ON PHOTOVOLTAGE SPECTRUM OF GAAS

被引：7

作者：

DAHLBERG, SC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.569059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1056 / 1059

页数：4

共 15 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[2] OBSERVATION OF EXTRINSIC SURFACE STATES ON (1120) CDS [J].

BRILLSON, LJ .

SURFACE SCIENCE, 1975, 51 (01) :45-60

[3]

DAHLBERG SC, TO BE PUBLISHED

[4] TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1972, 30 (01) :185-&

[5] SURFACE PHOTOVOLTAGE SPECTROSCOPY - NEW APPROACH TO STUDY OF HIGH-GAP SEMICONDUCTOR SURFACES [J].

GATOS, HC ;

LAGOWSKI, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :130-135

[6] TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING [J].

HENZLER, M .

SURFACE SCIENCE, 1970, 22 (01) :12-&

[7] SURFACE PHOTOVOLTAGE SPECTROSCOPY AND SURFACE PIEZOELECTRIC EFFECT IN GAAS [J].

LAGOWSKI, J ;

BALTOV, I ;

GATOS, HC .

SURFACE SCIENCE, 1973, 40 (02) :216-226

[8] PHOTOVOLTAGE INVERSION EFFECT AND ITS APPLICATION TO SEMICONDUCTOR SURFACE STUDIES - CDS [J].

LAGOWSKI, J ;

BALESTRA, CL ;

GATOS, HC .

SURFACE SCIENCE, 1971, 27 (03) :547-&

[9]

Ludeke R., 1975, Surface Science, V47, P132, DOI 10.1016/0039-6028(75)90279-4

[10] ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES [J].

LUDEKE, R ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1974, 33 (11) :653-656

← 1 2 →