CURRENT TRANSPORT AND STRUCTURAL MODEL FOR LI-DIFFUSED CDTE LOW-RESISTANCE CONTACTS

被引:9
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LEE, CT
BUBE, RH
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10.1063/1.336159
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O59 [应用物理学];
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页码:880 / 889
页数:10
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[1]   LOW RESISTANCE CONTACTS TO P-TYPE CADMIUM TELLURIDE [J].
ANTHONY, TC ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :89-109
[2]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[3]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[4]  
BETHE HA, 1942, MIT4312 RAD LAB REP
[5]   CADMIUM TELLURIDE FILMS AND SOLAR-CELLS [J].
BUBE, RH ;
FAHRENBRUCH, AL ;
SINCLAIR, R ;
ANTHONY, TC ;
FORTMANN, C ;
HUBER, W ;
LEE, CT ;
THORPE, T ;
YAMASHITA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :528-538
[6]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[7]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[8]   NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].
CROWELL, CR ;
RIDEOUT, VL .
SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&
[9]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[10]   CDTE-HGTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
MILLION, A ;
PIAGUET, J .
APPLIED PHYSICS LETTERS, 1982, 41 (08) :713-715