EFFECT OF THE ALAS SURFACE RECONSTRUCTION ON PROPERTIES OF GE GROWN ON ALAS

被引：2

作者：

MAEDA, T

TANAKA, H

TAKIKAWA, M

KASAI, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00815-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the dependence of the properties of Ge layer on AlAs surface reconstruction in molecular beam epitaxial growth of Ge on AlAs(100). Hole mobility depended drastically on surface reconstruction, and it was greatly improved on (5 x 4)-reconstructed AlAs. Hole mobility as high as 564 cm/V . s with a sheet hole concentration of 1.1 x 10(13) Cm-2 was Obtained for 380 nm thick Ge. Moreover, the mobility of the surface region reached 1088 cm(2)/V . s. The (5 x 4)-reconstructed AlAs surface is considered to have a roughly even coverage of Al and As. We believe that charge neutrality at the interface suppresses surface segregation and/or diffusion.

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页码：649 / 653

页数：5

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