INFRARED, RAMAN, AND X-RAY-DIFFRACTION STUDIES OF SILICON-OXIDE FILMS FORMED FROM SIH4 AND N2O CHEMICAL VAPOR-DEPOSITION

被引：50

作者：

NAKAMURA, M ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

USAMI, K ^{[1
]}

ITOH, Y ^{[1
]}

NOZAKI, T ^{[1
]}

机构：

[1] RIKAGAKU KENKYUSHO,WAKO,SAITAMA 351,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 02期

关键词：

D O I：

10.1149/1.2113868

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：482 / 488

页数：7

共 27 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[2] EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI [J].

CHANDRASEKHAR, M ;

RENUCCI, JB ;

CARDONA, M .

PHYSICAL REVIEW B, 1978, 17 (04) :1623-1633

[3]

DIAMARIA DJ, 1979, J APPL PHYS, V50, P5826

[4] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

[5] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992

[6] ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

SOLID STATE COMMUNICATIONS, 1977, 21 (06) :591-593

[7] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS [J].

HARTSTEIN, A ;

TSANG, JC ;

DIMARIA, DJ ;

DONG, DW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :836-837

[8] RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON [J].

IQBAL, Z ;

VEPREK, S ;

WEBB, AP ;

CAPEZZUTO, P .

SOLID STATE COMMUNICATIONS, 1981, 37 (12) :993-996

[9] ON THE NATURE OF CVD SI-RICH SIO2 AND SI3N4 FILMS [J].

IRENE, EA ;

CHOU, NJ ;

DONG, DW ;

TIERNEY, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2518-2521

[10]

KANELLIS G, 1980, PHYS REV B, V21, P1534

← 1 2 3 →