ASYMMETRY OF ANION AND CATION VACANCY MIGRATION ENTHALPIES IN III-V COMPOUND SEMICONDUCTORS - ROLE OF THE KINETIC-ENERGY

被引:27
作者
VANVECHTEN, JA [1 ]
WAGER, JF [1 ]
机构
[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331
来源
PHYSICAL REVIEW B | 1985年 / 32卷 / 08期
关键词
D O I
10.1103/PhysRevB.32.5259
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5259 / 5264
页数:6
相关论文
共 32 条
[1]   NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].
BOURGOIN, JC ;
CORBETT, JW .
PHYSICS LETTERS A, 1972, A 38 (02) :135-&
[2]   ISOTOPE-EFFECT FOR SELF-DIFFUSION IN GE [J].
CAMPBELL, DR .
PHYSICAL REVIEW B, 1975, 12 (06) :2318-2324
[3]   IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].
CAMRAS, MD ;
HOLONYAK, N ;
HESS, K ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187
[4]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[5]   DEFECTS IN ULTRAFAST QUENCHED ALUMINUM-DOPED SILICON [J].
CHANTRE, A .
APPLIED PHYSICS LETTERS, 1985, 46 (03) :263-265
[6]   VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J].
CHANTRE, A ;
KECHOUANE, M ;
BOIS, D .
PHYSICA B & C, 1983, 116 (1-3) :547-552
[7]   STUDY OF SI SELF-DIFFUSION BY NUCLEAR TECHNIQUES [J].
DEMOND, FJ ;
KALBITZER, S ;
MANNSPERGER, H ;
DAMJANTSCHITSCH, H .
PHYSICS LETTERS A, 1983, 93 (09) :503-506
[8]   ATOMIC MIGRATION IN MONATOMIC CRYSTALS [J].
FLYNN, CP .
PHYSICAL REVIEW, 1968, 171 (03) :682-&
[9]  
FLYNN CP, 1972, DEFECTS DIFFUSION SO, P133
[10]   DONOR DIFFUSION DYNAMICS IN SILICON [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :397-+