VLSI WIRING CAPACITANCE

被引：30

作者：

COTTRELL, PE ^{[1
]}

BUTURLA, EM ^{[1
]}

机构：

[1] IBM CORP,INFORMAT SYS & TECHNOL GRP,MECH DESIGN AUTOMAT PROGRAM OFF,POUGHKEEPSIE,NY 12602

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1985年 / 29卷 / 03期

关键词：

D O I：

10.1147/rd.293.0277

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：277 / 288

页数：12

共 20 条

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[3]

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[4]

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[7]

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[8]

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[9] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

GEIPEL, HJ ;

HSIEH, N ;

ISHAQ, MH ;

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WHITE, FR .

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[10]

GEORGE JA, 1981, COMPUTER SOLUTION LA

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