CHARACTERIZATION OF HETEROJUNCTION PARAMETERS BY SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY

被引：13

作者：

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573325

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：829 / 834

页数：6

共 54 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[3] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES
BAUER, RS
MIKKELSEN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 491 - 497
[4] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[5] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[6] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES
CHIARADIA, P
KATNANI, AD
SANG, HW
BAUER, RS
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249
[7] COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1
[8] DANIELS RR, 1985, J VAC SCI TECHNOL A, V3, P203
[9] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION
DENLEY, D
MILLS, KA
PERFETTI, P
SHIRLEY, DA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503
[10] PHOTOEMISSION-STUDIES OF A-SIXC1-X-H/A-SI AND A-SIXC1-X-H/HYDROGENATED AMORPHOUS-SILICON HETEROJUNCTIONS
EVANGELISTI, F
FIORINI, P
GIOVANNELLA, C
PATELLA, F
PERFETTI, P
QUARESIMA, C
CAPOZI, M
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 764 - 766