CALCULATION OF LOCAL DENSITY OF STATES AT DEFECTS IN DIAMOND AND SILICON

被引：5

作者：

JONES, R

KING, T

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90228-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：72 / 75

页数：4

共 17 条

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[7] ENERGY-LEVELS IN IDEAL AND RECONSTRUCTED MODELS OF A SILICON VACANCY [J].

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