PHOTOLUMINESCENCE STUDY OF DEFECTS IN GAAS FORMED BY ANNEALING IN AN H-2 GAS-FLOW

被引：22

作者：

OTSUBO, M ^{[1
]}

MIKI, H ^{[1
]}

MITSUI, S ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 11期

关键词：

D O I：

10.1143/JJAP.16.1957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1957 / 1966

页数：10

共 36 条

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TSU, R .

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FULLER, CS ;

WOLFSTIRN, KB .

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[6] DEFECT CENTERS IN GAAS PRODUCED BY CU DIFFUSION [J].

FULLER, CS ;

WOLFSTIR.KB ;

ALLISON, HW .

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[7]

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[8] ON TEMPERATURE DEPENDENCE OF IRON ACCEPTOR LEVEL IN GAAS1 (RESISTIVITY HALL MOBILITY T/E) [J].

HAISTY, RW .

APPLIED PHYSICS LETTERS, 1965, 7 (08) :208-&

[9] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

[10] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J].

HILL, DE .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A866-&

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