ELASTIC STRAIN RELAXATION IN PATTERNED HETEROEPITAXIAL STRUCTURES

被引:11
作者
FISCHER, A
KUHNE, H
ROOS, B
RICHTER, H
机构
[1] Inst. of Semiconductor Phys., Frankfurt
关键词
D O I
10.1088/0268-1242/9/12/005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a two-dimensional analysis of the in-plane misfit stress and its elastic relaxation in rectangular patterned heteroepitaxial layer structures on a rigid substrate. Based on the generally acknowledged model of relaxing film stress we calculate the distribution of the misfit stress versus distance from the free surface of a mesa edge. By superposition of the isolated stress fields of the mesa edges, we obtain the biaxial misfit stress distribution in a finite heteroepitaxial thin film mesa on a thick substrate. The formalism developed permits the determination of the variation of stress values as a function of material and size characteristics of the patterned layer-substrate system. The theoretical analysis will be applied to the III-V compound semiconductor integration with Si or Ge.
引用
收藏
页码:2195 / 2198
页数:4
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